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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520D DESCRIPTION With TO-3PN package High voltage,high speed Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current(DC) Base current-peak Collector power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 800 7.5 10 25 6 9 UNIT V V V A A A A W ae ae TC=25ae 125 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520D CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO VCEsat Emitter-base breakdown voltage IB=600mA; IC=0 IC=6A; IB=1.2A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A VCE=ratedVCE; VBE=0 Tj=125ae VEB=7.5V; IC=0 100 1.3 1.0 2.0 300 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain hFE-2 VF DC current gain IC=1A ; VCE=5V IC=6A ; VCE=5V IF=6A Diode forward voltage CC Collector capacitance HAN INC SEM GE OND IC 5 TOR UC 7 10 2.2 115 23 V IE=0 ;VCB=10V;f=1MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520D SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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